DocumentCode :
3609989
Title :
Proton Cross-Sections from Heavy-Ion Data in Deep-Submicron Technologies
Author :
Hansen, D.L.
Author_Institution :
Maxwell Technol. Inc., San Diego, CA, USA
Volume :
62
Issue :
6
fYear :
2015
Firstpage :
2874
Lastpage :
2880
Abstract :
This paper reports on the calculation of proton SEU cross section from heavy-ion data using a number of different models. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature. The closed-form models developed with earlier semiconductor devices typically overestimated the proton cross section, and the difference increased with smaller feature sizes. The results emphasize that low LET heavy-ion data is crucial in determining the proton upset cross section.
Keywords :
radiation hardening (electronics); semiconductor device models; LET heavy-ion data; deep-submicron technologies; heavy-ion cross sections; linear energy transfer; proton SEU cross section; proton upset cross section; semiconductor devices; single-event upset; Accuracy; Data models; Mathematical model; Protons; Single event upsets; Heavy ion; SEU; SEU in deep submicron devices; prediction tool; proton induced SEU; single-event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2015.2482360
Filename :
7322302
Link To Document :
بازگشت