• DocumentCode
    3609989
  • Title

    Proton Cross-Sections from Heavy-Ion Data in Deep-Submicron Technologies

  • Author

    Hansen, D.L.

  • Author_Institution
    Maxwell Technol. Inc., San Diego, CA, USA
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • Firstpage
    2874
  • Lastpage
    2880
  • Abstract
    This paper reports on the calculation of proton SEU cross section from heavy-ion data using a number of different models. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature. The closed-form models developed with earlier semiconductor devices typically overestimated the proton cross section, and the difference increased with smaller feature sizes. The results emphasize that low LET heavy-ion data is crucial in determining the proton upset cross section.
  • Keywords
    radiation hardening (electronics); semiconductor device models; LET heavy-ion data; deep-submicron technologies; heavy-ion cross sections; linear energy transfer; proton SEU cross section; proton upset cross section; semiconductor devices; single-event upset; Accuracy; Data models; Mathematical model; Protons; Single event upsets; Heavy ion; SEU; SEU in deep submicron devices; prediction tool; proton induced SEU; single-event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2482360
  • Filename
    7322302