Title :
600 GHz InP HBT frequency multiplier
Author :
Choi, S.H. ; Urteaga, M. ; Kim, M.
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 μm InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 μm finger devices in common-base push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of -8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.
Keywords :
III-V semiconductors; bipolar integrated circuits; frequency multipliers; heterojunction bipolar transistors; indium compounds; submillimetre wave integrated circuits; HBT frequency multiplier; InP; common-base push-push configuration; finger device; frequency 590 GHz; frequency 600 GHz; heterojunction bipolar transistor; matching network; monolithic frequency multiplier circuit; on-wafer RF probe; six hundred gigahertz; size 0.25 mum; size 6 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.2916
