DocumentCode :
3610205
Title :
Porous Silicon/Silicon Hybrid Substrate Applied to the Monolithic Integration of Common-Mode and Bandpass RF Filters
Author :
Capelle, Marie ; Billoue, Jerome ; Poveda, Patrick ; Gautier, Gael
Author_Institution :
GREMAN Lab., Tours Univ., Tours, France
Volume :
62
Issue :
12
fYear :
2015
Firstpage :
4169
Lastpage :
4173
Abstract :
In order to develop high performances and miniaturized devices for RF communications, monolithic integration becomes an important challenge for microelectronics industries. Bandpass filters and common-mode filter have been integrated on 6-in porous silicon (PS)/silicon hybrid substrates with PS regions under passive devices. An improvement of the rejection level on common mode was demonstrated on PS regards to low-resistivity silicon. Furthermore, the bandwidth differential was increased regards to bulk silicon and, thus, allows the development of devices for high-speed communications systems.
Keywords :
band-pass filters; elemental semiconductors; passive filters; radiofrequency filters; radiofrequency integrated circuits; silicon; PS region; RF communications; Si; bandpass RF filters; bandwidth differential; bulk silicon; common-mode RF filters; high-speed communications systems; low-resistivity silicon; microelectronic industry; monolithic integration; passive devices; porous silicon-silicon hybrid substrate; Band-pass filters; Electromagnetic compatibility; Microwave measurement; Monolithic integrated circuits; Radio frequency; Silicon; Electromagnetic compatibility (EMC) filters; RF device; RF device.; microwave measurement; passive devices; porous silicon (PS);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2483840
Filename :
7327185
Link To Document :
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