Porous Silicon/Silicon Hybrid Substrate Applied to the Monolithic Integration of Common-Mode and Bandpass RF Filters

Author

Capelle, Marie ; Billoue, Jerome ; Poveda, Patrick ; Gautier, Gael

Author_Institution

GREMAN Lab., Tours Univ., Tours, France

Volume

62

Issue

12

fYear

2015

Firstpage

4169

Lastpage

4173

Abstract

In order to develop high performances and miniaturized devices for RF communications, monolithic integration becomes an important challenge for microelectronics industries. Bandpass filters and common-mode filter have been integrated on 6-in porous silicon (PS)/silicon hybrid substrates with PS regions under passive devices. An improvement of the rejection level on common mode was demonstrated on PS regards to low-resistivity silicon. Furthermore, the bandwidth differential was increased regards to bulk silicon and, thus, allows the development of devices for high-speed communications systems.

Keywords

band-pass filters; elemental semiconductors; passive filters; radiofrequency filters; radiofrequency integrated circuits; silicon; PS region; RF communications; Si; bandpass RF filters; bandwidth differential; bulk silicon; common-mode RF filters; high-speed communications systems; low-resistivity silicon; microelectronic industry; monolithic integration; passive devices; porous silicon-silicon hybrid substrate; Band-pass filters; Electromagnetic compatibility; Microwave measurement; Monolithic integrated circuits; Radio frequency; Silicon; Electromagnetic compatibility (EMC) filters; RF device; RF device.; microwave measurement; passive devices; porous silicon (PS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2483840

Filename

7327185