Consistent Modeling and Power Gain Analysis of Microwave SiGe HBTs in CE and CB Configurations

Author

Alvarez-Botero, German ; Torres-Torres, Reydezel ; Murphy-Arteaga, Roberto S.

Author_Institution

Radio Freq. Res. Group, Fed. Univ. of Santa Catarina, Florianopolis, Brazil

Volume

63

Issue

12

fYear

2015

Firstpage

3888

Lastpage

3895

Abstract

This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit representations using the same values for the parameters in both configurations.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; CB configuration; CE configuration; SiGe; bias-dependent substrate parasitic; common-base configuration; common-emitter configuration; consistent modeling; heterojunction bipolar transistor; microwave HBT; power gain analysis; Capacitance; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Microwave theory and techniques; Silicon germanium; Substrates; CB configuration; CE configuration; SiGe-HBT; equivalent circuit modeling; power gain; substrate parasitics determination;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2015.2496375

Filename

7328345