Consistent DC and RF MOSFET Modeling Using an $S$ -Parameter Measurement-Based Parameter Extraction Method in the Linear Region

This paper demonstrates the feasibility of using data extracted from experimental S-parameters to implement models to accurately represent MOSFET behavior under DC and RF regimes with consistency. For this purpose, a method to extract the MOSFET´s drain-to-source conductance, the subthreshold swing, the source/drain resistance, the effective gate length, and the threshold voltage is proposed. The method is based on the determination of the inverse of the channel resistance that is directly related to the previously mentioned parameters. Hence, two-port S-parameter measurements of common-source configured RF-MOSFETs with different gate lengths are performed, varying the gate-to-source voltage from the subthreshold region to strong inversion. In order to verify the validity and consistency of the method, excellent correlation of DC and RF models with experimental data is achieved.