Title :
A 300-V LDMOS Analog-Multiplexed Driver for MEMS Devices
Author :
Shanshan Dai ; Knepper, Ronald W. ; Horenstein, Mark N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
Abstract :
The paper presents a high-voltage integrated-circuit driver capable of producing analog voltages up to 300 V, using Dalsa´s 0.8- μm HV CMOS/DMOS process, suitable for MEMS and medical systems. The IC driver includes a HV operational amplifier (op-amp) with a class-B output stage, and HV analog switches with improved off-isolation performance. In contrast to previous frequency compensation schemes, where only one dominant pole occurs below the unity-gain bandwidth, the HV op-amp employs a novel frequency compensation topology with three poles and two zeros located within the unity-gain bandwidth, and is capable of driving large capacitive loads from 100 pF to 10 nF. Theoretical analysis of off-isolation of the HV analog switches is also reported and confirms the improvement in off-isolation performance.
Keywords :
CMOS analogue integrated circuits; driver circuits; microswitches; operational amplifiers; power integrated circuits; switchgear; Dalsa HV CMOS-DMOS process; HV analog switches; HV op-amp; HV operational amplifier; IC driver; LDMOS analog-multiplexed driver; MEMS devices; MEMS systems; analog voltages; capacitance 100 pF to 10 nF; class-B output stage; frequency compensation topology; high-voltage integrated-circuit driver; improved off-isolation performance; medical systems; size 0.8 mum; unity-gain bandwidth; voltage 300 V; Actuators; Capacitance; Capacitors; Logic gates; Micromechanical devices; Transistors; Voltage control; Analog switch; HV amplifier; LDMOS; MEMS; class-B amplifier; frequency compensation; high voltage integrated circuits; level shifter; off-isolation;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2015.2495723
