DocumentCode
3610683
Title
Compact Thermal Failure Model for Devices Subject to Electrostatic Discharge Stresses
Author
Yuanzhong Zhou ; Meng Miao ; Salcedo, Javier A. ; Hajjar, Jean-Jacques ; Liou, Juin J.
Author_Institution
Corp. Electrostatic Discharge Dept., Analog Devices, Inc., Wilmington, MA, USA
Volume
62
Issue
12
fYear
2015
Firstpage
4128
Lastpage
4134
Abstract
A leading cause of device failure under electrostatic discharge stress conditions is thermal failure. This failure occurs as a result of excessive energy dissipation which raises the temperature of the device to a critical breaking level. To predict such a physical failure at circuit level, a compact model compatible with circuit simulators is proposed. The model is derived from the fundamental heat transfer equations and is shown to accurately predict thermal failure for arbitrary electrical stress waveforms.
Keywords
electrostatic discharge; heat transfer; semiconductor device models; thermal stress cracking; arbitrary electrical stress waveforms; compact thermal failure model; device failure; electrostatic discharge stress conditions; energy dissipation; fundamental heat transfer equations; physical failure; Circuit simulation; Energy dissipation; Heat transfer; Circuit simulation; compact model; electrostatic discharge (ESD); junction thermal failure; thermal network; transmission line pulsing (TLP);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2491223
Filename
7331117
Link To Document