• DocumentCode
    3610683
  • Title

    Compact Thermal Failure Model for Devices Subject to Electrostatic Discharge Stresses

  • Author

    Yuanzhong Zhou ; Meng Miao ; Salcedo, Javier A. ; Hajjar, Jean-Jacques ; Liou, Juin J.

  • Author_Institution
    Corp. Electrostatic Discharge Dept., Analog Devices, Inc., Wilmington, MA, USA
  • Volume
    62
  • Issue
    12
  • fYear
    2015
  • Firstpage
    4128
  • Lastpage
    4134
  • Abstract
    A leading cause of device failure under electrostatic discharge stress conditions is thermal failure. This failure occurs as a result of excessive energy dissipation which raises the temperature of the device to a critical breaking level. To predict such a physical failure at circuit level, a compact model compatible with circuit simulators is proposed. The model is derived from the fundamental heat transfer equations and is shown to accurately predict thermal failure for arbitrary electrical stress waveforms.
  • Keywords
    electrostatic discharge; heat transfer; semiconductor device models; thermal stress cracking; arbitrary electrical stress waveforms; compact thermal failure model; device failure; electrostatic discharge stress conditions; energy dissipation; fundamental heat transfer equations; physical failure; Circuit simulation; Energy dissipation; Heat transfer; Circuit simulation; compact model; electrostatic discharge (ESD); junction thermal failure; thermal network; transmission line pulsing (TLP);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2491223
  • Filename
    7331117