Title :
Transparent thin-film transistor and diode circuit using graphene and amorphous indium–gallium–zinc-oxide active layer
Author :
Kim, J. ; Jeong, S.M. ; Jeong, J.
Author_Institution :
Div. of Nano & Energy Convergence Res., Daegu Gyeongbuk Inst. of Sci. & Technol., Daegu, South Korea
Abstract :
A transparent thin-film transistor-diode (TFT-diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium-gallium-zinc-oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT-diode device can be applied to transparent a-IGZO and graphene integrated circuits.
Keywords :
electrodes; gallium compounds; graphene devices; indium compounds; semiconductor diodes; thin film transistors; C; InGaZnO; a-IGZO active layer; amorphous indium-gallium-zinc-oxide active layer; diode circuit; graphene active layer; graphene electrode; serial connection; transparent graphene diode; transparent thin film transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.3086
