DocumentCode
3611322
Title
The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits
Author
Jung Seungwoo ; Ickhyun Song ; Fleetwood, Zachary E. ; Raghunathan, Uppili ; Lourenco, Nelson E. ; Oakley, Michael A. ; Wier, Brian R. ; Roche, Nicolas J-H ; Khachatrian, Ani ; McMorrow, Dale ; Buchner, Stephen P. ; Warner, Jeffrey H. ; Paki, Pauline ; Cr
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
62
Issue
6
fYear
2015
Firstpage
2599
Lastpage
2605
Abstract
The effects of negative feedback, both external and internal, on single event transients (SETs) in SiGe HBT analog circuits are investigated. In order to examine internal negative feedback effects, basic common-emitter NPN current mirrors, with and without emitter degeneration resistors, are utilized. A Wilson current mirror and a Wilson mirror with its intrinsic external feedback removed are used to study external negative feedback effects under the influence of laser-induced single events. The measurement data clearly show notable improvements in SET response that can be made by employing both internal and external negative feedback. The peak transient in the output current is reduced, and the settling time upon a laser strike is shortened significantly by negative feedback. All four investigated current mirrors were fabricated with IBM 8HP 130 nm SiGe BiCMOS technology.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; analogue circuits; current mirrors; feedback; heterojunction bipolar transistors; radiation hardening (electronics); BiCMOS technology; HBT analog circuits; SET; SiGe; Wilson current mirror; common emitter NPN current mirrors; emitter degeneration resistors; negative feedback effects; single-event transients; size 130 nm; BiCMOS integrated circuits; Heterojunction bipolar transistors; Mirrors; Negative feedback; Radiation hardening (electronics); Silicon germanium; Single event transients; Transient analysis; Current mirrors; SiGe BiCMOS HBT; Wilson current mirror; negative feedback; radiation hardening; silicon-germanium; single-event; single-event transient;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2015.2498540
Filename
7336567
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