DocumentCode
3611740
Title
Correction to “Comprehensive Methodology for the Statistic of SRAM Vmin” [Sep 15 289-297]
Author
Pompl, Thomas ; Strasser, Rudolf ; Drexl, Stefan ; Ostermayr, Martin
Volume
15
Issue
4
fYear
2015
Firstpage
638
Lastpage
638
Abstract
Presents corrections to, ???Comprehensive methodology for the statistic of SRAM Vmin,??? (Pompl, T. et al, IEEE Trans. Device Mater. Rel., vol. 15, no. 3, pp. 289???297, Sep. 2015).
Keywords
Dielectric breakdown; SRAM chips; Statistical analysis;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2015.2498241
Filename
7343821
Link To Document