Single Event Measurement and Analysis of Antimony Based n-Channel Quantum-Well MOSFET With High- $\kappa$ Dielectric

Heavy-ion induced single-event measurements for n-channel InAsSb quantum-well metal-on-insulator field-effect transistors (QW-MOSFETs) are demonstrated for a range of gate bias conditions. Marked differences were observed in the transient current profile and the resultant collected charge at the drain nodes of the transistors depending on whether the devices were biased in accumulation or depletion with different gate voltages ( VGS). While the amplitude of the transients decreases as the transistors are biased into accumulation, a long decay tail of transients with enhanced charge collection is obtained compared to that in depletion. To analyze the transient response, a calibrated TCAD device simulation equipped with a heavy ion induced ionization model has been developed, which shows excellent agreement with the measured results for the entire range of evaluated gate bias conditions. The simulation analysis reveals that the charge-collection enhancement phenomenon in an n-channel InAsSb QW-MOSFET is associated with the increased bipolar gain due to the increased hole storage in accumulation.