• DocumentCode
    3611863
  • Title

    A Comparison of Single-Event Transients in Pristine and Irradiated {{\\rm Al}_{0.3}}{{\\rm Ga}_{0.7}}{{\\rm N}/{\\rm GaN}} HEMTs using Two-Photon Absorption and Heavy Ions

  • Author

    Khachatrian, A. ; Roche, N.J.-H. ; Buchner, S. ; Koehler, A.D. ; Anderson, T.J. ; Ferlet-Cavrois, V. ; Muschitiello, M. ; McMorrow, D. ; Weaver, B. ; Hobart, K.D.

  • Author_Institution
    Sotera Defense Solutions, Hernden, VA, USA
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • Firstpage
    2743
  • Lastpage
    2751
  • Abstract
    Single-event transients (SETs) were investigated in Al0.3Ga0.7N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; radiation hardening (electronics); two-photon processes; wide band gap semiconductors; Al0.3Ga0.7N-GaN; HEMT; SET; heavy ions; high-electron-mobility transistors; optical excitation; single-event transients; two-photon absorption; Gallium nitride; HEMTs; Single event transients; GaN; heavy ions; high-electron-mobility transistor (HEMT); laser; single event transients;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2498286
  • Filename
    7348756
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3611863