DocumentCode :
3611863
Title :
A Comparison of Single-Event Transients in Pristine and Irradiated 
HEMTs using Two-Photon Absorption and Heavy Ions
Author :
Khachatrian, A. ; Roche, N.J.-H. ; Buchner, S. ; Koehler, A.D. ; Anderson, T.J. ; Ferlet-Cavrois, V. ; Muschitiello, M. ; McMorrow, D. ; Weaver, B. ; Hobart, K.D.
Author_Institution :
Sotera Defense Solutions, Hernden, VA, USA
Volume :
62
Issue :
6
fYear :
2015
Firstpage :
2743
Lastpage :
2751
Abstract :
Single-event transients (SETs) were investigated in Al0.3Ga0.7N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; radiation hardening (electronics); two-photon processes; wide band gap semiconductors; Al0.3Ga0.7N-GaN; HEMT; SET; heavy ions; high-electron-mobility transistors; optical excitation; single-event transients; two-photon absorption; Gallium nitride; HEMTs; Single event transients; GaN; heavy ions; high-electron-mobility transistor (HEMT); laser; single event transients;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2015.2498286
Filename :
7348756
Link To Document :
