Title :
SEB Hardened Power MOSFETs With High-K Dielectrics
Author :
Xin Wan ; Wei Song Zhou ; Shufeng Ren ; Dao Guang Liu ; Jun Xu ; Han Liang Bo ; En Xia Zhang ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Ma, T.P.
Author_Institution :
Tsinghua Univ., Beijing, China
Abstract :
Simulations of the SEB hardness of power MOSFETs are carried out with an experimentally calibrated structure. The effects of incorporating high permittivity gate dielectric layers and increasing channel doping concentration are investigated. The simulation results indicate that high-k dielectrics and high channel doping are promising methods to achieve SEB-hardened power MOSFETs. This offers a potential path to power MOSFETs that are resistant to SEB with thinner, more radiation-tolerant gate dielectrics.
Keywords :
dielectric devices; power MOSFET; semiconductor doping; SEB hardened power MOSFET; channel doping concentration; high permittivity gate dielectric layers; high-K dielectrics; Dielectrics; High-K gate dielectrics; Permittivity; Power MOSFET; High-k dielectric; TCAD simulation; power MOSFETs; single-event burnout (SEB);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2498145
