DocumentCode :
3611904
Title :
Charge Collection Mechanisms of Ge-Channel Bulk 
MOSFETs
Author :
Samsel, Isaak K. ; En Xia Zhang ; Sternberg, Andrew L. ; Kai Ni ; Reed, Robert A. ; Fleetwood, Daniel M. ; Alles, Michael L. ; Schrimpf, Ronald D. ; Linten, Dimitri ; Mitard, Jerome ; Witters, Liesbeth ; Collaert, Nadine
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Volume :
62
Issue :
6
fYear :
2015
Firstpage :
2725
Lastpage :
2731
Abstract :
Single-event transients in SiGe MOS devices with ultrathin quantum well channels have been shown in previous work to exhibit opposite polarities for source and drain strikes. This work reports polarity reversal in similar devices with thick Ge channels due to the favorability of prompt hole collection by either the source or drain region, depending on the strike location. A slower charge-collection mechanism is also present due to the n-well/ p-substrate structure, which allows ion-generated carriers from the substrate to flood the body of the device.
Keywords :
Ge-Si alloys; MOSFET; ionisation; quantum well devices; radiation hardening (electronics); semiconductor device testing; MOS devices; SiGe; bulk pMOSFET; charge collection mechanisms; ion-generated carriers; n-well-p-substrate structure; single-event transients; ultrathin quantum well channels; Germanium; MOS devices; MOSFET; Quantum wells; Silicon germanium; Single event transients; Charge collection; germanium; silicon-germanium; single-event effect; single-event transient;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2015.2489020
Filename :
7348810
Link To Document :
