GaAs Displacement Damage Dosimeter Based on Diode Dark Currents

Author

Warner, Jeffrey H. ; Messenger, Scott R. ; Cress, Cory D. ; Walters, Robert J. ; Roche, Nicolas J.-H ; Clark, Kenneth A. ; Bennett, Mitchell F. ; Blackmore, Ewart W. ; Trinczek, Michael

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

62

Issue

6

fYear

2015

Firstpage

2995

Lastpage

3002

Abstract

GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD). The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a DD dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

Keywords

III-V semiconductors; dosimeters; error statistics; gallium arsenide; semiconductor device testing; semiconductor diodes; DD dosimeter; DDD; GaAs; diode dark currents; displacement damage dose; displacement damage dosimeter; error estimate determination; proton energy range; proton testing; voltage bias; Dark current; Diodes; Dosimetry; Gallium arsenide; Radiation effects; Space vehicles; Diode dark currents; GaAs devices; diodes; displacement damage; dosimeters; dosimetry; nonionizing energy loss; radiation effects; radiation environment; space instrumentation; space radiation effects; space weather; space weather modeling; spacecraft;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2496720

Filename

7348812