DocumentCode
3611919
Title
Analyzing the Effectiveness of a Frame-Level Redundancy Scrubbing Technique for SRAM-based FPGAs
Author
Tonfat, Jorge ; Lima Kastensmidt, Fernanda ; Rech, Paolo ; Reis, Ricardo ; Quinn, Heather M.
Author_Institution
PGMICRO, UFRGS, Porto Alegre, Brazil
Volume
62
Issue
6
fYear
2015
Firstpage
3080
Lastpage
3087
Abstract
Radiation effects such as soft errors are the major threat to the reliability of SRAM-based FPGAs. This work analyzes the effectiveness in correcting soft errors of a novel scrubbing technique using internal frame redundancy called Frame-level Redundancy Scrubbing (FLR-scrubbing). This correction technique can be implemented in a coarse grain TMR design. The FLR-scrubbing technique was implemented on a mid-size Xilinx Virtex-5 FPGA device used as a case study. The FLR-scrubbing technique was tested under neutron radiation and fault injection. Implementation results demonstrated minimum area and energy consumption overhead when compared to other techniques. The time to repair the fault is also improved by using the Internal Configuration Access Port (ICAP). Neutron radiation test results demonstrated that the proposed technique is suitable for correcting accumulated SEUs and MBUs.
Keywords
SRAM chips; failure analysis; field programmable gate arrays; radiation hardening (electronics); redundancy; semiconductor device reliability; semiconductor device testing; FLR-scrubbing technique; ICAP; MBU; SEU; SRAM based FPGA; TMR design; Xilinx Virtex-5 FPGA device; correction technique; fault injection; frame-level redundancy scrubbing technique; internal configuration access port; internal frame redundancy; multiple bit upset; neutron radiation test; single event upset; soft errors; Fault tolerance; Field programmable gate arrays; Radiation effects; Fault tolerance; field programmable gate arrays; radiation effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2015.2489601
Filename
7348832
Link To Document