Electro-optical modeling of high power semiconductor laser based on an InGaAs/GaAs/InGaP heterostructure

We present the electrical-optical modeling of a high power semiconductor laser diode for emission at 800 nm wavelength. We describe a thorough detailed procedure for the modeling of a semiconductor laser device with a Separate Confinement Heterostructure (SCH), based on the material alloys of III-V compounds families, InGaAsP/InGaAsP/InGaP on GaAs substrates. The heterostructure active region produces a peak emission at 0.8 nm. The SCH heterostructure comprises a quantum well 100 Å thick of In_xGa_1-xAs_yP_1-y (x = 0.14, y = 0.73) alloy. The quantum barriers layers comprise quaternary materials of composition In_xGa_1-xAs_yP_1-y (x = 0.39, y = 0.2). The confining layers of the quaternary SCH heterostructure may involve higher gap materials, such as ternary InGaN or quaternary AlGaInP. Band gaps of quaternary materials in the well and confining layers of the SCH heterostructure correspond to wavelengths of 0.8 μm (E_g = 1.55 eV) and 0.69 μm (E_g = 1.8 eV), respectively.