DocumentCode :
3612321
Title :
Resistive switching mechanism in printed non-volatile Ag/ZrO2/ITO sandwiched structure
Author :
Awais, M.N. ; Choi, K.H.
Author_Institution :
Dept. of Electr. Eng., COMSATS Inst. of Inf. Technol. Lahore, Lahore, Pakistan
Volume :
51
Issue :
25
fYear :
2015
Firstpage :
2147
Lastpage :
2149
Abstract :
The resistive switching mechanism in the printed sandwiched structures of Ag/zirconium oxide/indium tin oxide (ITO) is analytically demonstrated. The switching from the ON to OFF state of the fabricated device is attributed to the modulation of ohmic contact into opposite Schottky barriers following on from the electrochemical dissolution of the Ag filament from the weakest point near the ITO electrode and alteration of the Schottky barriers into an ohmic contact consequential to the reformation of the Ag filament during the transition of OFF into ON state. Physical current conduction governing laws verify the concluded transitions between ohmic contact and Schottky barriers.
Keywords :
Schottky barriers; indium compounds; ohmic contacts; semiconductor switches; silver; tin compounds; zirconium compounds; Ag-ZrO2-ITO; Schottky barrier; electrochemical dissolution; indium tin oxide electrode; ohmic contact; physical current conduction; printed nonvolatile sandwiched structure; resistive switching mechanism; silver filament; zirconium oxide;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.2517
Filename :
7355506
Link To Document :
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