Photo-pyro-piezo-electric elastic bending method: investigation of metalsemiconductor structure

The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the ac-photovoltage and pyro-piezo-electric technique. The sample with metal-semi conductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal-semiconductor-metal pyro(piezo)electric system is given, including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodiffusion, thermoelastic and electronic deformation effects in semiconductor.