DocumentCode
3613400
Title
Small-signal model of partially-depleted SOI MOSFETs and its parameter extraction
Author
D. Tomaszewski;L. Lukasiak;K. Domanski;A. Jakubowski
Author_Institution
Inst. of Electron Technol., Warsaw, Poland
fYear
2002
fDate
6/24/1905 12:00:00 AM
Abstract
A new non-quasi static small-signal model of partially-depleted SOI MOSFETs is presented together with parameter extraction procedure. A method to eliminate parasitic capacitances from experimental data is also shown.
Keywords
"MOSFETs","Parameter extraction","Impact ionization","Capacitance","Steady-state","Voltage","Frequency","Electrons","Artificial intelligence","Microelectronics"
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN
0-7803-7380-4
Type
conf
DOI
10.1109/ICCDCS.2002.1004035
Filename
1004035
Link To Document