Title :
Polar diagram of wet-etched [100] InP
Author :
P. Elias;I. Kostic;S. Hasenohrl
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
fDate :
6/24/1905 12:00:00 AM
Abstract :
A modified wagon-wheel-mask technique was used to determine data for the reconstruction of a polar diagram of InP crystal wet etched in etchants based on HCl and H/sub 3/PO/sub 4/. It is demonstrated that the facet revelation and mask underetching within /spl plusmn/5/spl deg/ around [001] are very sensitive to the etchant composition as well as to mask orientation.
Keywords :
"Indium phosphide","Wet etching","Indium gallium arsenide","Crystallography","Strips","Molecular beam epitaxial growth","Shape","Crystalline materials","Topology","Informatics"
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014334
