Investigation of microstrip lines on two-layered semiconductor-dielectric substrate

Investigations were carried out on microstrip lines with a substrate having two layers of semiconductor GaAs and dielectric SiO/sub 2/ using a quasi-static approximation. The dependence of the microstrip line wave impedance, wavelength, effective permittivity, attenuation coefficient, and capacity per unit length on the upper substrate layer thickness, the strip conductor width, and its distance from the substrate edges has been studied. In addition, the quasi-TEM wave electric field distribution in the microstrip line has been determined.