• DocumentCode
    3613832
  • Title

    Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field

  • Author

    T. Wosinski;T. Figielski;A. Makosa;W. Dobrowolski;O. Pelya;B.F. Usher;B. Pecz

  • Author_Institution
    Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland
  • fYear
    2000
  • Firstpage
    451
  • Lastpage
    454
  • Abstract
    Current passing in the forward direction through a GaAs-based heterojunction at liquid helium temperatures exhibits, under a strong magnetic field applied parallel to the junction plane, regular fluctuations. We argue that these fluctuations are associated with the formation of closed Aharonov-Bohm-type orbits encircling misfit dislocations generated at the interface in which the current carriers are temporarily trapped.
  • Keywords
    "Magnetic field measurement","Fluctuations","Voltage","Magnetic fields","Physics","Temperature","Atomic layer deposition","Extraterrestrial measurements","Gallium arsenide","Materials science and technology"
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
  • Print_ISBN
    0-7803-6698-0
  • Type

    conf

  • DOI
    10.1109/COMMAD.2000.1022987
  • Filename
    1022987
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3613832