Title :
Analytical formulation and electrical measurements of self-heating in silicon BJT´s
Author :
N. Nenadovic;V. d´Alessandro;L.K. Nanver;N. Rinaldi;H. Schellevis;J.W. Slotboom
Author_Institution :
Lab. of ECTM, Delft Univ. of Technol., Netherlands
fDate :
6/24/1905 12:00:00 AM
Abstract :
A new analytical formulation of the temperature at thermal runaway in silicon BJT´s is presented and supported by measurements on a thermally very sensitive silicon-on-glass process. The linear relationship between V/sub BE/ and V/sub CB/ for a given collector current is used to define a straightforward method for electrically determining the biasing conditions at thermal runaway.
Keywords :
"Electric variables measurement","Thermal resistance","Temperature","Electrical resistance measurement","Bipolar transistors","Electric resistance","Laboratories","Silicon devices","Performance evaluation","Contacts"
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042879
