DocumentCode :
3614117
Title :
An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals
Author :
J.H. Kim;J.H. Kim;Y.S. Noh;Y.S. Kim;S.G. Kim;C.S. Park
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Daejon, South Korea
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
181
Lastpage :
184
Abstract :
We demonstrate a new MMIC smart power amplifier, which consists of dual chain power amplifiers with a single matching network, the power added efficiency (PAE) of which, for 16 dBm output power, is as much as 21%, which represents more than a factor of three improvement of the PAE while satisfying all W-CDMA specifications. The power amplifier has been devised with two different parallel connected InGaP/GaAs HBT power amplifiers, each amplifier fitted to different a maximum power value: one to 17.5 dBm for low power mode and the other to 28 dBm for high power mode. The low power mode reveals -33 dBc of adjacent channel leakage power ratio (ACLR) at 16 dBm with 14 mA of quiescent current. The high power mode exhibits 40% of PAE and -30 dBc of ACLR at the maximum output power of 28 dBm.
Keywords :
"MMICs","Power amplifiers","Multiaccess communication","Mobile communication","Power generation","High power amplifiers","Radio frequency","Broadband amplifiers","Gallium arsenide","Heterojunction bipolar transistors"
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
ISSN :
1064-7775
Print_ISBN :
0-7803-7447-9
Type :
conf
DOI :
10.1109/GAAS.2002.1049055
Filename :
1049055
Link To Document :
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