DocumentCode :
3614140
Title :
Physical and structural characterization of NiO films for gas detection
Author :
J. Kremmer;I. Hotovy;V. Rehacek;J. Siroky;L. Spiess;J. Schawohl
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
107
Lastpage :
110
Abstract :
Nickel oxide (NiO) thin films, for use as function sensor layers for chemical sensors, have been deposited on Si and alumina substrates by DC magnetron sputtering from a pure metallic Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The influence of deposition parameters and annealing temperature on the structural properties and surface roughness of the undoped and doped NiO films has been analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD has confirmed the polycrystalline structure of NiO films and also revealed the changes of the lattice constant of polycrystalline NiO films depending on the annealing temperatures. The NiO thin films were tested in order to investigate their response to hydrogen in the interval 0-1.5 vol% and ethanol in the interval 0-1200 ppm at different operating temperatures.
Keywords :
"Nickel","Sputtering","Thin film sensors","Chemical sensors","Annealing","X-ray scattering","Atomic force microscopy","Semiconductor thin films","Magnetic sensors","Sensor phenomena and characterization"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
Type :
conf
DOI :
10.1109/ASDAM.2002.1088487
Filename :
1088487
Link To Document :
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