Title :
A High Power 50GHz DDR IMPATT Oscillator with Low Side Band Noise
Author :
Y. Hirachi;Y. Toyama;Y. Fukukawa;Y. Tokumitsu
fDate :
5/29/1905 12:00:00 AM
Abstract :
Low-frequency instabilities in millimeter-wave Double-Drift-Region (DDR) IMPATT diodes are investigated and the oscillator circuit which suppresses low-frequency instabilities is developed. DDR IMPATT mounted in this circuit exhibited output powers 1.6W at 55.5 GHz with 11.5 percent efficiencies.
Keywords :
"Oscillators","Diodes","Impedance","Frequency","Low-frequency noise","Coaxial components","Circuit noise","Power generation","Equations","Laboratories"
Conference_Titel :
Microwave Symposium, 1976 IEEE-MTT-S International
DOI :
10.1109/MWSYM.1976.1123634
