Ultrafast carrier trapping and recombination in high resistivity ion implanted InP

MeV P/sup +/ implanted and annealed p-InP and Fe/sup +/ implanted and annealed semi-insulating InP have both been shown to produce the high resistivity, good mobility and ultrafast optical response desired for ultrafast photodetectors. Low temperature annealing was found to yield the fastest response times-130 fs for Fe/sup +/ implanted and 400 fs for P/sup +/ implanted InP, as well as resistivities of the order of 10/sup 6//spl Omega//square. For devices, the most advantageous treatment is implanting p-InP with P/sup +/ in the dose regime where type conversion occurs, with subsequent annealing at 500/spl deg/C. This produces high resistivities and ultrafast carrier trapping times that are only marginally dose dependent.