Title :
A non-quasi-static small-signal MOSFET model for radio and microwave frequencies including spreading gate resistances and capacitances
Author :
W.J. Kordalski;T. Stefanski
Author_Institution :
Fac. of Electron., Telecommun. & Informatics, Gdansk Univ. of Technol., Poland
fDate :
6/25/1905 12:00:00 AM
Abstract :
A new physically consistent, fully analytical non-quasi-static (NQS) small-signal MOSFET model for analysis and simulation of radio and microwave frequency circuits is proposed. Some results of a 3D analysis of spreading gate resistances and capacitances, main features and experimental verification of the new NQS four-terminal model are presented in this report. The validity of this model is experimentally proved up to 27 GHz.
Keywords :
"MOSFET circuits","Microwave frequencies","Capacitance","Radiofrequency integrated circuits","Integrated circuit modeling","Radio frequency","Marine technology","Electronic mail","Substrates","H infinity control"
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213963
