DocumentCode
3614481
Title
A non-quasi-static small-signal MOSFET model for radio and microwave frequencies including spreading gate resistances and capacitances
Author
W.J. Kordalski;T. Stefanski
Author_Institution
Fac. of Electron., Telecommun. & Informatics, Gdansk Univ. of Technol., Poland
fYear
2003
fDate
6/25/1905 12:00:00 AM
Firstpage
365
Lastpage
368
Abstract
A new physically consistent, fully analytical non-quasi-static (NQS) small-signal MOSFET model for analysis and simulation of radio and microwave frequency circuits is proposed. Some results of a 3D analysis of spreading gate resistances and capacitances, main features and experimental verification of the new NQS four-terminal model are presented in this report. The validity of this model is experimentally proved up to 27 GHz.
Keywords
"MOSFET circuits","Microwave frequencies","Capacitance","Radiofrequency integrated circuits","Integrated circuit modeling","Radio frequency","Marine technology","Electronic mail","Substrates","H infinity control"
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1213963
Filename
1213963
Link To Document