Title :
Fully differential receiver chipset for 40 Gb/s applications using GaInAs/InP single heterojunction bipolar transistors
Author :
K. Kiziloglu;S. Seetharaman;K.W. Glass;C. Bil;H.V. Duong;G. Asmanis
Author_Institution :
Intel Commun. Group, Intel Corp., Santa Clara, CA, USA
fDate :
6/25/1905 12:00:00 AM
Abstract :
Advent of multimedia applications, which require data links with ever-increasing capacity, is necessitating highspeed optical communication systems and driving research and development for high-speed ICs operating at 40 Gb/s. These optical fiber communication systems require high performance and low power chipsets, which incorporate useful service functions. We report on the design and characterization of a fully-differential 40 Gb/s receiver chipset, which includes a transimpedance amplifier and a limiting amplifier for SONET/SDH STS-768/STM-256 applications. The chipset is realized using a GaInAs/InP single heterojunction bipolar transistor (SHBT) process with a nominal f/sub T/>150GHz and f/sub max/>180GHz.
Keywords :
"Indium phosphide","Heterojunction bipolar transistors","Optical amplifiers","Optical receivers","Optical buffering","Optical feedback","Optical fiber communication","Photodetectors","Optical noise","Frequency"
Conference_Titel :
Computer Design, 2003. Proceedings. 21st International Conference on
Print_ISBN :
0-7695-2025-1
DOI :
10.1109/ICCD.2003.1240941