• DocumentCode
    3614718
  • Title

    Electrical study of 4H-SiC irradiated with swift heavy ions

  • Author

    E. Kalinina;G. Onushkin;D. Davidov;A. Hallen;A. Konstantinov;V.A. Skuratov;J. Stano

  • Author_Institution
    Ioffe Inst., St. Petersburg, Russia
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    106
  • Lastpage
    109
  • Abstract
    Radiation defects and electrical properties in 4H-SiC epitaxial layer bombarded with 245 MeV Kr ions were studied by deep level transient spectroscopy (DLTS) and electrical resistivity measurements. Capacitance-, current- and charge-DLTS spectra show the presence mainly of Z/sub 1/ (0.66 eV) deep levels similar to those obtained for electrons, neutrons or light ions. The temperature dependence of electrical resistivity of Schottky barriers is characterized by two stages not observed previously in silicon carbide for conventional type of irradiation.
  • Keywords
    "Electric resistance","Epitaxial layers","Spectroscopy","Electric variables measurement","Capacitance","Electrons","Neutrons","Temperature dependence","Schottky barriers","Silicon carbide"
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
  • Print_ISBN
    0-7803-7418-5
  • Type

    conf

  • DOI
    10.1109/SIM.2002.1242735
  • Filename
    1242735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3614718