Title :
Finite elements simulations of piezoresistive sensor of blood pressure
Author :
P. Sekalski;P. Pons;A. Napieralski
Author_Institution :
Dept. of Microelectron. & Comput. Sci., Tech. Univ. of Lodz, Poland
fDate :
6/25/1905 12:00:00 AM
Abstract :
The principle of the piezoresistance effect (PR) of n- and p-Si is presented. A graphical representation of the effect of impurity concentration and temperature on the PR is given. A model of a blood pressure piezoresistive sensor, which is under development in the Laboratory of Architecture and Analyses of Systems, is presented. The FEM simulations of this sensor are used to optimize its layout.
Keywords :
"Finite element methods","Piezoresistance","Blood pressure","Capacitive sensors","Stress","Silicon","Conductivity","Electron mobility","Energy states","Resistors"
Conference_Titel :
CAD Systems in Microelectronics, 2003. CADSM 2003. Proceedings of the 7th International Conference. The Experience of Designing and Application of
Print_ISBN :
966-553-278-2
DOI :
10.1109/CADSM.2003.1255136
