Title :
Vertical p-channel double-gate MOSFETs
Author :
J. Moers;S. Trellenkamp;Avd. Hart;M. Goryll;S. Mantl;P. Kordos;H. Luth
Author_Institution :
Inst. of Thin Films & Interfaces, Res. Center Julich, Germany
fDate :
6/25/1905 12:00:00 AM
Abstract :
Double-gate MOSFETs have drawn increasing interest within the last years because of their capability to reduce short channel effects. In this work a p-channel double-gate MOSFET layout was realised. Based on epitaxial growth and subsequent ion implantation, the p/n/p-doping profile is implemented in vertical sequence. P-channel devices with channel lengths of 50 nm and gate oxide thickness of 6.6 nm show transconductances of 480 /spl mu/S//spl mu/m, subthreshold slope of 126 mV/dec and DIBL of 80 mV/V.
Keywords :
"MOSFETs","Silicon","Substrates","Lithography","Ion implantation","FinFETs","Doping profiles","Boron","Transistors","Epitaxial growth"
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC ´03. 33rd Conference on
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256831
