• DocumentCode
    3615392
  • Title

    Novel electronic and optoelectronic properties of GaInNAs and related alloys

  • Author

    E.P. O´Reilly;S. Fahy;A. Lindsay;S. Tomic;R. Fehse;A.R. Adams;S.J. Sweeney;A.D. Andreev;P.J. Klar;H. Gruning;H. Riechert

  • Author_Institution
    NMRC, Univ. Coll., Cork, Ireland
  • fYear
    2003
  • fDate
    6/25/1905 12:00:00 AM
  • Abstract
    We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 /spl mu/m vertical emitting lasers.
  • Keywords
    "Laser theory","Gallium arsenide","Threshold current","Quantum well lasers","Nitrogen","Stimulated emission","Ultraviolet sources","Photonic band gap","Laser modes","Resonance"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO ´03. Conference on
  • Print_ISBN
    1-55752-748-2
  • Type

    conf

  • Filename
    1297974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3615392