• DocumentCode
    3615585
  • Title

    Optical and laser properties of epitaxially grown passively Q-switched Cr/sup 4+/:GGG/ Nd/sup 3+/:GGG, Cr/sup 4+/:YAG/Yb/sup 3+/:YAG and Cr/sup 4+/:YAG/ Nd/sup 3+/:YAG microchip lasers

  • Author

    K. Kopczynski;J. Sarnecki;Z. Mierczyk;J. Skwarcz;M. Kwasny;J. Mlynczak;S.B. Ubizski;I.M. Syvorotka;S. Melnyk;A. Matkowski

  • Author_Institution
    Inst. of Optoelectron., Mil. Univ. of Technol., Warsaw, Poland
  • fYear
    2003
  • fDate
    6/25/1905 12:00:00 AM
  • Firstpage
    758
  • Abstract
    We have used liquid phase epitaxy technique to grow Cr/sup 4+/ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on microchip characteristics (repetition rate, pulse energy and pulse length) were reported.
  • Keywords
    "Chromium","Microchip lasers","Neodymium","Optical films","Substrates","Pump lasers","Garnets","Laser theory","Crystals","Optical pumping"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
  • Print_ISBN
    0-7803-7734-6
  • Type

    conf

  • DOI
    10.1109/CLEOE.2003.1313841
  • Filename
    1313841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3615585