Title :
Drift-diffusion simulation of InSb devices
Author :
E. Sijercic;K. Mueller;B. Pejcinovic
Author_Institution :
Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA
fDate :
6/26/1905 12:00:00 AM
Abstract :
A methodology for InSb devices in standard drift-diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of low leakage room temperature InSb photodiodes.
Keywords :
"Semiconductor materials","Computational modeling","Photonic band gap","Electrons","Computer simulation","Temperature","Taylor series","Radiative recombination","Physics","Photodiodes"
Conference_Titel :
Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
Print_ISBN :
0-7803-8271-4
DOI :
10.1109/MELCON.2004.1346767
