DocumentCode
3618022
Title
Improvement of BV/sub CEO/ VS f/sub T/ trade-off by charge sharing effect
Author
M. Koricic;P. Biljanovic;T. Suligoj
Author_Institution
Fac. of Electr. Eng. & Comput., Zagreb, Croatia
Volume
2
fYear
2004
fDate
6/26/1905 12:00:00 AM
Firstpage
355
Abstract
The observed improvement of BV/sub CEO/ and f/sub T//spl middot/BV/sub CEO/ product of horizontal current bipolar transistor (HCBT) is explained by the collector charge sharing between the extrinsic and intrinsic base acceptors. It reduces the maximum electric field in the intrinsic transistor. A simple model is developed to physically explain the improvement of the breakdown voltage. An optimization of HCBT structure with respect to the BV/sub CEO/ and f/sub T//spl middot/BV/sub CEO/ product is given by the simulation. BV/sub CEO/ is increased by 23.6%, while f/sub T/ is reduced only by 6.3%, resulting in higher f/sub T/BV/sub CEO/ product.
Keywords
"Bipolar transistors","Electrons","Degradation","Doping profiles","Semiconductor process modeling","Voltage","Impact ionization","Electric breakdown","Frequency","Boundary conditions"
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN
0-7803-8499-7
Type
conf
DOI
10.1109/SMICND.2004.1403016
Filename
1403016
Link To Document