Title :
Improvement of BV/sub CEO/ VS f/sub T/ trade-off by charge sharing effect
Author :
M. Koricic;P. Biljanovic;T. Suligoj
Author_Institution :
Fac. of Electr. Eng. & Comput., Zagreb, Croatia
fDate :
6/26/1905 12:00:00 AM
Abstract :
The observed improvement of BV/sub CEO/ and f/sub T//spl middot/BV/sub CEO/ product of horizontal current bipolar transistor (HCBT) is explained by the collector charge sharing between the extrinsic and intrinsic base acceptors. It reduces the maximum electric field in the intrinsic transistor. A simple model is developed to physically explain the improvement of the breakdown voltage. An optimization of HCBT structure with respect to the BV/sub CEO/ and f/sub T//spl middot/BV/sub CEO/ product is given by the simulation. BV/sub CEO/ is increased by 23.6%, while f/sub T/ is reduced only by 6.3%, resulting in higher f/sub T/BV/sub CEO/ product.
Keywords :
"Bipolar transistors","Electrons","Degradation","Doping profiles","Semiconductor process modeling","Voltage","Impact ionization","Electric breakdown","Frequency","Boundary conditions"
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1403016
