• DocumentCode
    3618023
  • Title

    Dynamic behavior optimization of the junctions with SIPOS layer termination

  • Author

    C. Baditoiu;C. Ravariu;A. Rusu;F. Udrea

  • Author_Institution
    Fac. of Electr. Eng., Valahia Univ. of Targoviste, Romania
  • Volume
    2
  • fYear
    2004
  • fDate
    6/26/1905 12:00:00 AM
  • Firstpage
    367
  • Abstract
    In the power devices domain, one of the key problem is the edge termination improving. This work proposes an optimisation of the structures with field electrode and SIPOS layer (semi-insulating polycrystalline silicon) in order to accomplish a maximum of the breakdown voltage with a smallest area consumed. For these kinds of structures physical models and some simulations regarding the dynamic behaviour are presented.
  • Keywords
    "Dielectric constant","Conductivity","Capacitance","Silicon","Anodes","Voltage","Spirals","Electrodes"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
  • Print_ISBN
    0-7803-8499-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2004.1403019
  • Filename
    1403019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3618023