DocumentCode :
3618642
Title :
Advanced CMOS transistors in the nanotechnology era for high-performance, low-power logic applications
Author :
R. Chau;M. Doczy;B. Doyle;S. Datta;G. Dewey;J. Kavalieros;B. Jin;M. Metz;A. Majumdar;M. Radosavljevic
Author_Institution :
Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA
Volume :
1
fYear :
2004
fDate :
6/26/1905 12:00:00 AM
Firstpage :
26
Abstract :
Sustaining Moore´s Law requires continual transistor miniaturization. Through silicon innovations and breakthroughs, CMOS transistor scaling and Moore´s Law will continue at least through early next decade. By combining silicon innovations with other nanotechnologies on the same Si platform, it is expected that Moore´s Law will extend well into the next decade. This paper describes the most recent advances made in silicon CMOS transistor technology and discusses the challenges and opportunities presented by the recent emerging nanoelectronic devices such as carbon nanotubefield-effect transistors (FET), Si-nanowire FETs and III-V FETs for high-performance, low-power logic applications.
Keywords :
"Transistors","Nanotechnology","CMOS logic circuits","Moore´s Law","Silicon","FETs","Technological innovation","CMOS technology","Nanoscale devices","Carbon nanotubes"
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1434947
Filename :
1434947
Link To Document :
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