• DocumentCode
    3618859
  • Title

    Growth-rate induced defects in GaSb

  • Author

    D. Kindl;P. Hubik;J. Kristofik;J.J. Mares;E. Hulicius;J. Pangrac;K. Melichar;V. Jurka;Z. Vyborny;J. Touskova

  • fYear
    2004
  • fDate
    6/26/1905 12:00:00 AM
  • Firstpage
    259
  • Lastpage
    262
  • Keywords
    "P-n junctions","Epitaxial growth","Epitaxial layers","Substrates","Physics","Spectroscopy","Transient analysis","Molecular beam epitaxial growth","Mathematics","Phase measurement"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
  • Print_ISBN
    0-7803-8335-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2004.1441210
  • Filename
    1441210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3618859