3619008

InGaAs/InP avalanche photodiode with separated absorption, charge and multiplication layers

D. Hasko

2004

6/26/1905 12:00:00 AM

11

13

"Indium gallium arsenide","Indium phosphide","Avalanche photodiodes","Absorption","Photonic band gap","Optical noise","Voltage","Dark current","Current-voltage characteristics","MOCVD"

ieee

Photonics and Microsystems, 2004. Proceedings of 2004 International Students and Young Scientists workshop

0-7803-8598-5

conf

10.1109/STYSW.2004.1459925

1459925