• DocumentCode
    3619008
  • Title

    InGaAs/InP avalanche photodiode with separated absorption, charge and multiplication layers

  • Author

    D. Hasko

  • fYear
    2004
  • fDate
    6/26/1905 12:00:00 AM
  • Firstpage
    11
  • Lastpage
    13
  • Keywords
    "Indium gallium arsenide","Indium phosphide","Avalanche photodiodes","Absorption","Photonic band gap","Optical noise","Voltage","Dark current","Current-voltage characteristics","MOCVD"
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Microsystems, 2004. Proceedings of 2004 International Students and Young Scientists workshop
  • Print_ISBN
    0-7803-8598-5
  • Type

    conf

  • DOI
    10.1109/STYSW.2004.1459925
  • Filename
    1459925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619008