DocumentCode
3619173
Title
Panel discussion: Solid Sfafe Devices IV - Bipolar Transistor Modeling
Author
W.E. Newell
Author_Institution
Westinghouse Research Laboratories, Pittsburgh, Pa.
fYear
1968
fDate
5/21/1905 12:00:00 AM
Firstpage
102
Lastpage
102
Abstract
Summary form only given, as follows. The complete presentation was not made available for publication as part of the conference proceedings. Investigations on receiving-type electron tube processing methods were made because of high rate of electroh tube failures experienced in USAF electronic equipment subjected to high temperatures. The tube type selected for these investigations was the 6AR6 tried in two versions, distinguished from each other only by the processing and aging patterns applied. Both versions were subjected to a high temperature life test specified at 300°C bulb temperature. The result obtained was r~lated t.o the processing pattern applied in each of the versions tried. In the case of setting the transconductance slump at the limit of 10 per cent, the 6AR6 procegsed on the sealex exhaust system did not comply with the specified limit. It was found, however, that the 6AR6 subjected to an improved processing schedule was capab~g of complying with the specified limit. In following up these investigations, a project was initiated relating to the design and construction of an improved exhaust equipment incorporating advanced processing features and applicable to full scale electron tube production to be used for USAF electronic equipment operating at high temperatures. This project forms a part of the current USAF electron tube program aimed at continuously improving modern aircraft reliability.
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1968 International
Type
conf
DOI
10.1109/IEDM.1968.188029
Filename
1475554
Link To Document