• DocumentCode
    3619178
  • Title

    Sensitivity and noise of a lateral bipolar magnetotransistor in CMOS technology

  • Author

    R.S. Popovic;R. Widmer

  • Author_Institution
    LGZ Landis &
  • fYear
    1984
  • fDate
    6/6/1905 12:00:00 AM
  • Firstpage
    568
  • Lastpage
    571
  • Abstract
    An investigation of the magnetic field sensitivity and noise properties of a novel magnetotransistor structure is reported. The device is reminiscent of a long-channel NMOS transistor operated in the lateral bipolar mode, with an accelerating field in the base region. An approximate analysis of the sensitivity is made. Sensitivities as high as 1.5 T-1are measured. The equivalent input magnetic field noise density is below 0.4 × 10-6T/√Hz for frequencies as low as 10 Hz and total current of 0.6 mA.
  • Keywords
    "CMOS technology","Magnetic fields","Magnetic noise","Electrons","MOSFETs","Magnetic analysis","Bipolar transistors","Acceleration","Magnetic properties","Frequency"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190783
  • Filename
    1484554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619178