DocumentCode :
3619270
Title :
Thermal Simulation of and Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
Author :
G. Hanreich;S. Bychikhin;D. Pogany;M. Marso;P. Kordos;J. Nicolics
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
15
Lastpage :
16
Keywords :
"Aluminum gallium nitride","Gallium nitride","HEMTs","MODFETs","Temperature","Thermal loading","Thermal resistance","Electronic packaging thermal management","Thin film transistors","Thin film sensors"
Publisher :
ieee
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on
Print_ISBN :
0-7803-9325-2
Type :
conf
DOI :
10.1109/ISSE.2005.1490990
Filename :
1490990
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619270
