• DocumentCode
    3619442
  • Title

    The Planar-Doped-Barrier-FET: MOSFET Overcomes Conventional Limitations

  • Author

    W. Hansch;V.R. Rao;I. Eisele

  • Author_Institution
    Universit¨
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    624
  • Lastpage
    627
  • Keywords
    "MOSFET circuits","Doping profiles","Electrons","Fabrication","Current supplies","Voltage","Silicon","Electric variables","Energy consumption","Nanoscale devices"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194506
  • Filename
    1503436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619442