DocumentCode :
3619442
Title :
The Planar-Doped-Barrier-FET: MOSFET Overcomes Conventional Limitations
Author :
W. Hansch;V.R. Rao;I. Eisele
Author_Institution :
Universit¨
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
624
Lastpage :
627
Keywords :
"MOSFET circuits","Doping profiles","Electrons","Fabrication","Current supplies","Voltage","Silicon","Electric variables","Energy consumption","Nanoscale devices"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194506
Filename :
1503436
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619442
