DocumentCode :
3619446
Title :
New parameter extraction method for the simulation of the space charge created by Fowler-Nordheim electron injections in the gate oxide of MOS devices
Author :
G. Auriel;J.P. Dubuc;B. Sagnes;J. Oualid;G. Ghibaudo;P. Boivin
Author_Institution :
ENSPM, France
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
640
Lastpage :
643
Keywords :
"Parameter extraction","Space charge","MOS devices","Electron traps","Microelectronics","Nonvolatile memory","Substrates","MOS capacitors","Occupational stress","Integrated circuit reliability"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194510
Filename :
1503440
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619446
