3619447

Performance limits of deep submicron buried channel delta doped MOSFETs

K. Diawuo;A.G. O´Neill

University of Newcastle, UK

1997

6/19/1905 12:00:00 AM

644

647

"MOSFETs","Doping","Atomic layer deposition","Silicon germanium","Germanium silicon alloys","Threshold voltage","Computer simulation","Electrostatics","Leakage current","Cutoff frequency"

ieee

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

2-86332-221-4

conf

10.1109/ESSDERC.1997.194511

1503441