Analysis of Capacitance Behavior for Short-Channel Accumulation-Mode SOI PMOS Devices

Author

J.B. Kuo;K.W. Su

Author_Institution

National Taiwan University, Taiwan

fYear

1997

fDate

6/19/1905 12:00:00 AM

Firstpage

672

Lastpage

675

Keywords

"Capacitance","MOS devices","Transistors","Analytical models","Voltage","Substrates","Silicon","Semiconductor thin films","Thin film devices"

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

DOI

10.1109/ESSDERC.1997.194518

Filename

1503448

Link To Document