DocumentCode :
3619455
Title :
Two-dimensional analytical model of subthreshold current in fully-depleted SOI MOSFETs
Author :
S. Pidin;H. Kurino;M. Koyanagi
Author_Institution :
Tohoku University, Japan
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
676
Lastpage :
679
Keywords :
"Analytical models","Subthreshold current","MOSFETs"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194519
Filename :
1503449
Link To Document :
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