3619461

Two-stage degradation of submicron LDD n-MOSFETs by 1/f noise, charge pumping, and drain current measurements

S. Okhonin;L. Ren;M. Ilegems

Swiss Federal Institute of Technology, Switzerland

1997

6/19/1905 12:00:00 AM

700

703

"Degradation","MOSFET circuits","Charge pumps","Current measurement","Charge measurement","Noise measurement","Stress","Low-frequency noise","Hot carriers","Voltage"

ieee

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

2-86332-221-4

conf

10.1109/ESSDERC.1997.194525

1503455